IRF5210L【PDF 2/11 页】MOSFET P-CH 100V 40A TO-262

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IRF5210S/L

Electrical Characteristics @ T J = 25°C (unless otherwise specified)

Parameter

Min.

Typ.

Max. Units

Conditions

V (BR)DSS

Drain-to-Source Breakdown Voltage

-100

–––

––– V V GS = 0V, I D = -250μA

? V (BR)DSS / ? T J Breakdown Voltage Temp. Coefficient

–––

-0.11

–––

V/°C Reference to 25°C, I D = -1mA ?

R DS(on)

Static Drain-to-Source On-Resistance

–––

–––

0.06

?

V GS = -10V, I D = -24A ?

––– R G = 2.5 ?

V GS(th)

g fs

I DSS

I GSS

Q g

Q gs

Q gd

t d(on)

t r

t d(off)

t f

Gate Threshold Voltage

Forward Transconductance

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

-2.0

10

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

17

86

79

81

-4.0 V V DS = V GS , I D = -250μA

––– S V DS = -50V, I D = -21A ?

-25 V DS = -100V, V GS = 0V

μA

-250 V DS = -80V, V GS = 0V, T J = 150°C

100 V GS = 20V

nA

-100 V GS = -20V

180 I D = -21A

25 nC V DS = -80V

97 V GS = -10V, See Fig. 6 and 13 ??

––– V DD = -50V

––– I D = -21A

ns

––– R D = 2.4 ?, See Fig. 10 ?

L S

Internal Source Inductance

–––

7.5

–––

nH

Between lead,

and center of die contact

C iss

C oss

C rss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

–––

–––

–––

2700

790

450

––– V GS = 0V

––– pF V DS = -25V

––– ? = 1.0MHz, See Fig. 5 ?

Source-Drain Ratings and Characteristics

Parameter

Min. Typ. Max. Units

Conditions

I S

I SM

Continuous Source Current

(Body Diode)

Pulsed Source Current

(Body Diode) ?

––– –––

––– –––

-40

-140

A

MOSFET symbol

showing the

integral reverse

p-n junction diode.

G

D

S

V SD

Diode Forward Voltage

––– –––

-1.6 V T J = 25°C, I S = -24A, V GS = 0V ?

t rr

Q rr

t on

Notes:

Reverse Recovery Time

Reverse Recovery Charge

Forward Turn-On Time

––– 170 260 ns T J = 25°C, I F = -21A

––– 1.2 1.8 μC di/dt = -100A/μs ??

Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D )

? Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

? Starting T J = 25°C, L = 3.1mH

R G = 25 ? , I AS = -21A. (See Figure 12)

? Pulse width ≤ 300μs; duty cycle ≤ 2%.

? Uses IRF5210 data and test conditions

? I SD ≤ -21A, di/dt ≤ -480A/μs, V DD ≤ V (BR)DSS ,

T J ≤ 175°C

** When mounted on 1" square PCB (FR-4 or G-10 Material ).

For recommended footprint and soldering techniques refer to application note #AN-994.

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